A new degree of freedom in diode optimization: Arbitrary axial lifetime profiles by means of ion irradiation

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 123-126

  Hazdra, P ^a   Vobecky J ^a   Galster, N ^a   Humbel, O ^a   Dalibor, T ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

Fast power diode; Ion irradiation; Lifetime control

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; DEGREES OF FREEDOM (MECHANICS); ELECTRIC SPACE CHARGE; IRRADIATION; MASKS; PERFORMANCE; POWER ELECTRONICS;

ANODE SPACE CHARGES; ARBITRARY AXIAL LIFETIME PROFILES; FAST POWER DIODE; FAST RECOVERY POWER DIODES; ION SOURCE;

SEMICONDUCTOR DIODES;

EID: 0034449719     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Application-specific fast-recovery diode: Design and performance
2. Free-wheeling diodes with improved reverse-recovery by combined electron and proton irradiation
3. 4.5kV-fast-diodes with expanded SOA using a multi-energy proton lifetime technique
4. Verfahren zur Einstellung der Trägerlebensdauer in einem Halbleiterbauelement
5. A novel concept for fast recovery diodes having junction charge extraction (JCE) regions
6. Production of fast switching power thyristors by proton irradiation