Temperature characterization of deep and shallow defect centers of low noise silicon JFETs

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 517, Issue 1-3, 2004, Pages 313-336

  Arnaboldi, Claudio ^a   Fascilla, Andrea ^a   Lund, Mark W ^b   Pessina, Gianluigi ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b Lund Instrument Engineering Inc   (United States)

Author keywords

Cryogenic electronics; JFET; Low noise transistors; Low temperature operation; Noise

Indexed keywords

BOLOMETERS; CAPACITANCE; CRYOGENICS; LOW TEMPERATURE EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

ENERGY RESOLUTION; LOW NOISE TRANSISTORS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0348229181     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.09.034     Document Type: Article

References (61)

1. Jones R.C. J. Opt. Soc. Am. 43:1953;1.
2. Alessandrello A., Beeman J.W., Brofferio C., Cremonesi O., Fiorini E., Giuliani A., Haller E.E., Monfardini A., Nucciotti A., Pavan M., Pessina G., Previtali E., Zanotti L. Phys. Rev. Lett. 82:1999;513.
3. Alessandrello A., Brofferio C., Cattadori C., Cavallini R., Cremonesi O., Ferrario L., Giuliani A., Margesin B., Nucciotti A., Pavan M., Pessina G., Pignatel G., Previtali E., Sisti M. J. Phys. D. 32:1999;3099.
4. Wang K.K., van der Ziel A., Chenette E.R. IEEE Trans. Electron Devices. ED-22:1975;591.
5. Manfredi P.F., Ratti L., Re V., Speziali V. IEEE Trans. Nucl. Sci. NS-46:1999;1294.
6. F.N. Hooge, IEEE Trans. Electron Devices ED-41 (1926-1935).
7. Christensson S., Lundstrom I., Svensson C. Solid-State Electron. 11:1968;797.
8. Christensson S., Lundstrom I. Solid-State Electron. 11:1968;813.
9. Simoen E., Claeys C. Solid-State Electron. 39:1996;949.
10. Simoen E., Claeys C. Solid-State Electron. 43:1999;865.
11. Lukyanchikova N., Garbar N., Petrichuk M., Simoen E., Claeys C. Solid-State Electron. 44:2000;1239.
12. Shockley W., Read W.T. Jr. Phys. Rev. 87:1952;835.
13. Bemski G. Proc. IRE. 46:1958;990.
14. Shockley W. Proc. IRE. 46:1958;973.
15. Kandiah K., Deighton M.O., Whiting F.B. J. Appl. Phys. 66:1989;937.
16. Kandiah K. IEEE Trans. Electron Devices. ED-41:1994;2006.
17. Uren M.J., Day D.J., Kirton M.J. Appl. Phys. Lett. 47:1985;1195.
18. Gatti E., Longoni A., Sacco R. J. Appl. Phys. 78:1995;6283.
19. Hooge F.N., Ren L. Physica B. 193:1994;31.
20. Machlup S. J. Appl. Phys. 25:1954;341.
21. Van Rheenen A.D., Bosman G., van Vliet C.M. Solid-State Electron. 28:1985;457.
22. Sah C.T. Proc. IRE. 52:1964;795.
23. Lauritzen P.O. Solid State Electron. 8:1965;41.
24. Yau L.D., Sah C.T. IEEE Trans. Electron Devices. ED-16:1969;170.
25. Hung K.K., Ko P.K., Hu C., Cheng Y.C. IEEE Trans. Electron. Devices. 37:1990;654.
26. R.A. Smith, Semiconductors, 2nd Edition, Cambridge University Press, Cambridge, 1978, pp. 282-283.
27. Burgess R.E. Physica XX. 11:1954;1007.
28. Burgess R.E. Proc. Phys. Soc. B. 68:1955;661.
29. Lax M. Rev. Modern Phys. 32:1960;25.
30. Burgess R.E. Proc. Phys. Soc. B. 69:1956;1020.
31. F.N. Hooge, L. Ren, Physica B 191 (220-226).
32. Van der Ziel A. Proc. IEEE. 51:1963;1670.
33. Murray D.C., Evans A.G.R., Carter J.C. IEEE Trans. Electron Devices. ED-38:1991;407.
34. Scholz F., Hwang J.M., Schroder D.K. Solid-State Electron. 31:1988;205.
35. SKUDOTECH® is a Registered trademark by SELITE, Via Aurelio Saffi 29, 20123 Milano, IT.
36. Alessandrello A., Brofferio C., Cremonesi O., Giuliani A., Monfardini A., Nucciotti A., Pavan M., Pessina G., Previtali E. IEEE Nucl. Sci. NS-47:2000;1851.
37. Hendriks E.A., Zijlstra R.J.J. Physica. 147B:1987;291.
38. Kugler S. IEEE Trans. Electron Devices. ED-35:1988;623.
39. Grassi V., Colombo C.F., Camin D.V. IEEE Trans. Nucl. Sci. NS-48:2001;2899.
40. Kandiah K., Whiting F.B. Nucl. Instr. and Meth. A. 326:1993;49.
41. Kandiah K., Whiting F.B. Nucl. Instr. and Meth. A. 305:1991;600.
42. Kandiah K., Whiting F.B. Solid-State Electron. 21:1978;1079.
43. van Rheenen A.D., Bosman G., Zulstra R.J.J. Solid-State Electron. 30:1987;259.
44. Scholz F.J., Roach J.W. Solid-State Electron. 35:1992;447.
45. Haslett J.W., Kendall E.J.M. IEEE Trans. Electron Devices. ED-19:1972;943.
46. W.H. Press, B.P. Flannery, S.A. Teukoslsky, W.T. Vetterling, Numerical Recipes in C++, Cambridge University Press, Cambridge, 2002, pp. 704-711.
47. Camin D.V., Colombo Grassi C.F. J. Phys. IV (Proceedings). 12:2002;Pr3-37.
48. Fascilla A., Pessina G. Nucl. Instr. and Meth. A. 469:2001;116.
49. Lund M.W., Decker K.W., Perkins R.T., Phillips J.D. Nucl. Instr. and Meth. A. 380:1996;318.
50. A. Alessandrello, C. Brofferio, O. Cremonesi, A. Fascilla, A. Giuliani, Mark W.Lund, A. Nucciotti, M. Pavan, G. Pessina, E. Previtali, Low noise silicon JFETs working at low temperatures for bolometric detector readout, WOLTE 4, 4th European Workshop on Low Temperature Electronics' 2000, pp. 137-141.
51. Haslett J.W., Mkendall E.J., Scholz F.J. Solid-State Electron. 18:1975;199.
52. Morin F.J., Maita J.P. Phys. Rev. 96:1954;28.
53. Jacoboni C., Canali C., Ottavaini G., Alberigi Quaranta A. Solid-State Electron. 20:1977;77.
54. A. Van Der Ziel, Fisica dei dispositivi elettronici a stato solido, III Edizione, Liguori Editore, 1979, pp. 554-556 (translation from Solid State Physical Electronics, Prentice-Hall, Englewood Cliffs, NJ).
55. A. Van Der Ziel, Fisica dei dispositivi elettronici a stato solido, III Edizione, Liguori Editore, 1979, pp. 554-556 (translation from Solid State Physical Electronics, Prentice-Hall, Englewood Cliffs, NJ).
56. Takagi K., Matsumoto K. Solid-State Electron. 20:1977;1.
57. Klassen F.M., Robinson J.R. IEEE Trans. Electron Devices. ED-17:1970;852.
58. Jayaraman R., Sodini C.G. IEEE Trans. Electron Devices. ED-36:1989;1773.
59. Dierickx B., Simoen E., Cos S., Vermeiren J., Claeys C., Declerck G.J. IEEE Trans. Electron Devices. ED-38:1991;907.
60. Lengeler B. Cryogenics. 40:1974;439.
61. M. Shur, Physics of Semiconductor Devices, Prentice-Hall, Englewood Cliffs, NJ, 1990, pp. 54-66.