On generation-recombination noise

Physica B: Physics of Condensed Matter

Volumn 191, Issue 3-4, 1993, Pages 220-226

  Hooge, F N ^a   Ren, L ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; SPECTRUM ANALYSIS;

CONDUCTION BAND; GENERATION RECOMBINATION NOISE; LORENTZIANS; THERMAL ACTIVATION ENERGY; THREE LEVEL SYSTEMS; TRAP;

THERMAL NOISE;

EID: 0027906315     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(93)90080-P     Document Type: Article

References (6)

1. Semiconductor impurity analysis from low-frequency noise spectra