Low frequency noise versus temperature spectroscopy of recently designed Ge JFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2899-2905

  Grassi, Valerio ^a   Francesco Colombo, Carlo ^a   Camin, Daniel V ^a  

^a INFN SEZIONE DI MILANO   (Italy)

Author keywords

Ge JFETs; Generation recombination (GR) noise; Low frequency noise versus temperature spectroscopy (LFN versus T); Low temperature electronics

Indexed keywords

CARRIER CONCENTRATION; CRYOGENICS; ELECTRON ENERGY LEVELS; FERMI LEVEL; FREQUENCIES; SEMICONDUCTING GERMANIUM; SPECTROSCOPIC ANALYSIS; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

GENERATION-RECOMBINATION (GR) NOISE;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0035694507     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974725     Document Type: Article

References (19)

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