Negative differential resistance of porous silicon

IEEE Electron Device Letters

Volumn 21, Issue 12, 2000, Pages 587-589

  Lee, Ming Kwei ^a   Chu, Chi Hsing ^a   Tseng, Yu Chu ^a   Shyr, Jong Min ^a   Kao, Chia Hsiung ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; NEGATIVE RESISTANCE; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES; WIRE;

NEGATIVE DIFFERENTIAL RESISTANCE;

POROUS SILICON;

EID: 0034498779     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.887474     Document Type: Article

References (8)

1. L. T Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett., vol. 57, pp. 1046-1048, 1990.
2. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1983, ch. 8.
3. M. K. Lee, Y. H. Wang, and C. H. Chu, "High-sensitivity porous silicon photodetectors fabricated through rapid thermal oxidation and rapid thermal annealing," IEEE J. Quantum Electron., vol. 33, pp. 2199-2202, 1997.
4. M. K. Lee, Y. C. Tseng, and C. H. Chu, "A high-gain porous silicon metal-semiconductor-metal photodetector through rapid thermal oxidation and rapid thermal annealing," Appl. Phys., vol. A67, pp. 541-543, 1988.
5. V. Petrova-Koch et al., "Rapid-thermal-oxidized porous Si - The superior photoluminescent Si," Appl. Phys. Lett., vol. 61, pp. 943-945, 1992.
6. R. Herinio, G. Bomchil, K. Barla, and C. Bertrand, "Porosity and pore size distribution of porous silicon layers," J. Electrochem. Soc., vol. 134, pp. 1994-2000, 1987.
7. G. D. Sanders and Y. C. Chang, "Optical properties of the free-standing silicon quantum wires," Appl. Phys. Lett., vol. 60, pp. 2525-2527, 1992.
8. K. Hess, H. Morkoc, H. Shichijo, and B. G. Streetman, "Negative differential resistance through real-space electron transfer," Appl. Phys. Lett., vol. 35, pp. 469-471, 1979.