Influence of UV illumination condition on NDR performance of porous silicon superlattice

Electronics Letters

Volumn 32, Issue 17, 1996, Pages 1618-1619

  Wang, S J ^a   Lin, J C ^a   Tsai, H Y ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Negative resistance; Porous silicon; Semiconductor superlattices

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; NEGATIVE RESISTANCE; POROUS SILICON; SEMICONDUCTING SILICON; ULTRAVIOLET RADIATION;

PEAK TO VALLEY CURRENT RATIO (PVCR);

SEMICONDUCTOR SUPERLATTICES;

EID: 0030212251     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961069     Document Type: Article

References (8)

1. CANHAM, L.T.: 'Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers', Appl. Phys. Lett., 1990, 57, pp. 1046-1048
2. LEHMANN, V., and GÖSELE, U.: 'Porous silicon formation: A quantum wire effect', Appl. Phys. Lett., 1991, 58, pp. 856-858
3. FROHNHOFF, ST., BERGER, M.G., THONISSEN, M., DIEKER, C., VESCAN, L., MÜNDER, H., and LUTH, H.: 'Formation techniques for porous silicon superlattices', Thin Solid Films, 1995, 255, pp. 59-62
4. BERGER, M.G., THÖNISSEN, M., ARENS-FISCHER, R., MÜNDER, H., LÜTH, H., ARNTZEN, M., and THEIß, W.: 'Investigation and design of optical properties of porosity superlattices', Thin Solid Films, 1995, 255, pp. 313-316
5. VINCENT, G.: 'Optical properties of porous silicon superlattices', Appl. Phys. Lett., 1994, 64, pp. 2367-2369
6. WU, X.L., YAN, F., PAN, F.M., BAO, X., JIANG, S.S., ZHANG, M.S., and FENG, D.: Observation of folded acoustic phonons in a porous silicon superlattice', Appl. Phys. Lett., 1996, 68, pp. 611-612
7. LURYI, S., in SZE, S.M. (Ed.): 'High-speed semiconductor devices' (Wiley-Interscience Publication, New York, 1990), p. 115
8. TSUCHIYA, M., and SAKAKI, H.: 'Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structure', Appl. Phys. Lett., 1986, 49, pp. 88-90