High-Power Highly Reliable 1.02-1.06-μm InGaAs Strained-Quantum-Well Laser Diodes

IEEE Journal of Quantum Electronics

Volumn 39, Issue 12, 2003, Pages 1515-1520

  Yuda, Masahiro ^a   Sasaki, Toru ^a   Temmyo, Jiro ^b,c   Sugo, Mitsuru ^a   Amano, Chikara ^a  

^a NTT CORPORATION   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Low temperature growth; Quantum well lasers; Semiconductor lasers; Semiconductor optical amplifiers; Semiconductor quantum wells

Indexed keywords

FIBER LASERS; LIGHT AMPLIFIERS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; SECOND HARMONIC GENERATION; SEMICONDUCTOR QUANTUM WELLS; TENSILE STRESS; TRANSMISSION ELECTRON MICROSCOPY; WAVELENGTH DIVISION MULTIPLEXING;

CATASTROPHIC OPTICAL DAMAGE; LOW-TEMPERATURE GROWTH; SEMICONDUCTOR OPTICAL AMPLIFIERS; TRANSVERSE MODE OPERATION;

QUANTUM WELL LASERS;

EID: 0347946762     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.819561     Document Type: Article

References (19)

1. Y. Nishida, M. Yamada, T. Kanamori, K. Kobayashi, J. Temmyo, S. Sudo, and Y. Ohishi, "Development of an efficient praseodymium-doped fiber amplifier," IEEE J. Quantum Electron., vol. 34, pp. 1332-1339, 1998.
2. T. Sakamoto, "S-band fiber optical amplifiers," presented at the Optical Fiber Conf. 2001, Anaheim, CA, 2001, TuQ1.
3. 3 periodic domain inverted bulk SHG crystal," Rev. Laser Eng., vol. 26, pp. 861-866, 1998.
4. P. K. York, K. J. Beernink, G. E. Fernandez, and J. J. Coleman, "InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (λ 1 μm) by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 54, pp. 499-501, 1989.
5. R. G. Waters, P. K. York, K. J. Beernink, and J. J. Coleman, "Viable strained-layer laser at λ = 1100 nm," J. Appl. Phys., vol. 67, pp. 1132-1134, 1990.
6. K. Czotscher, E. C. Larkins, S. Weisser, W. Benz, J. Daleiden, J. Fleissner, M. Maier, J. D. Ralston, and J. Rosenzweig, "Uncooled high-temperature (130°C) operation of InGaAs-GaAs multiple quantum-well-lasers at 20 Gb/s," IEEE Photon. Technol. Lett., vol. 9, pp. 575-577, 1997.
7. D. Schlenker, T. Miyamoto, Z. Chen, F. Koyama, and K. Iga, "1.17-mm highly strained GaInAs-GaAs quantum-well laser," IEEE Photon. Technol. Lett., vol. 11, pp. 946-948, 1999.
8. H. Nozawa, T. Sasaki, C. Amano, J. Temmyo, and Munoz, "Reliability of 0.98-1.02 μm InGaAs laser diodes ∼ Improvement by low temperature growth of active layer," presented at the Lasers and Electro-Optics Soc. '99, San Francisco, CA, 1999, TuI3.
9. M. Yuda, T. Sasaki, J. Temmyo, M. Sugo, and C. Amano, "High-power, highly reliable 1.05 μm InGaAs strained quantum well laser diodes as pump sources for thulium-doped fiber amplifiers," Electron. Lett., vol. 38, pp. 45-46, 2002.
10. M. Yuda, J. Temmyo, T. Sasaki, M. Sugo, and C. Amano, "High-power and highly reliable 1.06 μm InGaAs strained quantum well laserdiodes," in Proc. 18th IEEE Int. Semiconductor Laser Conf., Garmisch, Germany, 2002, PD 6.
11. F. Bugge, U. Zeimer, M. Sato, M. Weyers, and G. Trankle, "MOVPE growth of highly strained InGaAs/GaAs quantum wells," J. Cryst. Growth, vol. 183, pp. 511-518, 1998.
12. D. Schlenker, T. Miyamoto, Z. Chen, F. Koyama, and K. Iga, "Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength laser," J. Cryst. Growth, vol. 209, pp. 27-36, 2000.
13. 1-x As/GaAs (0.36 ≤ x ≤ 1) single quantum wells," Appl. Phys. Lett., vol. .61, pp. 3139-3141, 1992.
14. T. Fukunaga, M. Wada, and T. Hayakawa, "Reliable operation of strain-compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers," Appl. Phys. Lett., vol. 69, pp. 248-250, 1996.
15. T. Hayakawa, F. Akinaga, T. Kuniyasu, K. Matsumoto, and T. Fukunaga, "Highly reliable and high-power operation of 1.05 μm InGaAs/GaAsP strained-compensated single-quantum-well laser diodes for pumping Tm-doped fiber amplifier," presented at the Optical Fiber Conf. 2002, Anaheim, CA, 2002, ThN1.
16. L. Hofmann, A. Klehr, F. Bugge, H. Wenzel, V. Smirnitski, J. Sebastian, and G. Erbert, "180 mW DBR lasers with first-order grating in GaAs emitting at 1062 nm," Electron. Lett., vol. 36, pp. 534-535, 2000.
17. J. Temmyo and M. Sugo, "Design of high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical divergence angle of 18°," Electron. Lett., vol. 31, pp. 642-644, 1995.
18. J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers," J. Cryst. Growth, vol. 27, pp. 118-125, 1974.
19. 1-x/Si strained-layer heterostructures," Appl. Phys. Lett., vol. 47, pp. 322-324, 1985.