High-power, highly reliable 1.05 μm InGaAs strained quantum well laser diodes as pump sources for thulium-doped fibre amplifiers

Electronics Letters

Volumn 38, Issue 1, 2002, Pages 45-46

  Yuda, M ^a   Sasaki, T ^a   Temmyo, J ^b   Sugo, M ^a   Amano, C ^a  

^a NTT CORPORATION   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIBER LASERS; LOW TEMPERATURE OPERATIONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PUMPING; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SINGLE MODE FIBERS; THULIUM;

INDIUM GALLIUM ARSENIDE STRAINED QUANTUM WELL LASER DIODES; LOW TEMPERATURE GROWTH; THULIUM-DOPED FIBRE AMPLIFIERS;

QUANTUM WELL LASERS;

EID: 0037012070     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020021     Document Type: Article

References (12)

1. 1.47 μm Tm-doped fluoride fiber amplifier and fiber laser using a 1.064 μm upconversion pumping scheme
2. Novel 1.50-μm band gain-shifted thulium-doped fiber amplifier by using dual wavelength pumping of 1.05 μm and 1.56 μm
3. High gain and low noise TDFA for 1500 nm band employing novel high concentration doping technique
4. Laser-diode-pumped highly-efficient gain-shifted thulium-doped fibre amplifier operating in the 1480-1510-nm band
5. Characterisation of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness
6. Reliability of 0.98-1.02 μm InGaAs laser diodes - Improvement by low temperature growth of active layer
7. Reliable operation of strain-compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers
8. 180 mW DBR lasers with first-order grating in GaAs emitting at 1062 nm
9. Development of 1.02-μm pump laser diodes
10. Design of high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical divergence angle of 18°
11. 0.64As/GaAs single quantum wells
12. Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers