-
1
-
-
0028514223
-
Highly efficient 1.064 μm up conversion pumped 1.47 μm thulium doped fluoride fibre amplifier
-
R.M. Percival et al., "Highly efficient 1.064 μm up conversion pumped 1.47 μm thulium doped fluoride fibre amplifier," Electron. Lett. 30, 1684-1685 (1994).
-
(1994)
Electron. Lett.
, vol.30
, pp. 1684-1685
-
-
Percival, R.M.1
-
2
-
-
0027580784
-
1-W CW Tm-doped fluoride fibre laser at 1.47 μm
-
Y. Miyajima et al., "1-W CW Tm-doped Fluoride Fibre Laser at 1.47 μm," Electron. Lett. 29, 660-661 (1993).
-
(1993)
Electron. Lett.
, vol.29
, pp. 660-661
-
-
Miyajima, Y.1
-
3
-
-
0033123733
-
Reliability improvement of 980 nm laser diodes with a new facet passivation process
-
H. Horie et al., "Reliability improvement of 980 nm laser diodes with a new facet passivation process," J. Selected Topics in Quantum Electron. 5, 832-838 (1999).
-
(1999)
J. Selected Topics in Quantum Electron.
, vol.5
, pp. 832-838
-
-
Horie, H.1
-
4
-
-
0001001409
-
High-power operation of strained InGaAs/AlGaAs single quantum well lasers
-
A. Moser et al., "High-power operation of strained InGaAs/AlGaAs single quantum well lasers," Appl. Phys. Lett. 59, 2642-2644 (1991).
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 2642-2644
-
-
Moser, A.1
-
5
-
-
0346955939
-
Defects in epitaxial multilayers
-
J.W. Matthews et al., "Defects in epitaxial multilayers," J. Crystal Growth 27, 118-125 (1974).
-
(1974)
J. Crystal Growth
, vol.27
, pp. 118-125
-
-
Matthews, J.W.1
-
6
-
-
0030575230
-
Reliable operation of strain-compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers
-
T. Fukunaga et al. "Reliable operation of strain-compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers," Appl. Phys. Lett. 69, 248-250 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 248-250
-
-
Fukunaga, T.1
-
7
-
-
0032613895
-
Temperature-insensitive operation of real index guided 1.06 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes
-
H. Asano et al., "Temperature-insensitive operation of real index guided 1.06 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes," Appl. Phys. Lett. 74, 3090-3092 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 3090-3092
-
-
Asano, H.1
-
8
-
-
0032628647
-
Almost temperature-in-sensitive characteristics in 1.06 μm InGaAs laser diodes with strain compensating electron-barrier layers
-
T. Hayakawa et al., "Almost temperature-in-sensitive characteristics in 1.06 μm InGaAs laser diodes with strain compensating electron-barrier layers," Proc. SPIE 3626, 106-114 (1999).
-
(1999)
Proc. SPIE
, vol.3626
, pp. 106-114
-
-
Hayakawa, T.1
-
9
-
-
0020139428
-
Unstable regions in III-V quaternary solid solutions composition plane calculated with strictly regular solution approximation
-
K. Onabe, "Unstable regions in III-V quaternary solid solutions composition plane calculated with strictly regular solution approximation," Jpn. J. Appl. Phys. 21, L323-L325 (1982).
-
(1982)
Jpn. J. Appl. Phys.
, vol.21
-
-
Onabe, K.1
-
10
-
-
0011794548
-
High-power and highly reliable 1.05 μm InGaAs strained-quantum-well laser diodes as pump sources for Thulium-doped fiber amplifiers
-
M. Yuda et al., "High-power and highly reliable 1.05 μm InGaAs strained-quantum-well laser diodes as pump sources for Thulium-doped fiber amplifiers," OAA '01, Proc. paper PD2 (2001).
-
(2001)
OAA '01, Proc. paper PD2
-
-
Yuda, M.1
|