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Volumn 70, Issue , 2002, Pages 479-481

Highly reliable and high-power operation of 1.05 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes for pumping Tm-doped fiber amplifiers

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); EPITAXIAL GROWTH; PHOTOLUMINESCENCE; PUMPING (LASER); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THULIUM;

EID: 0036441823     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (10)
  • 1
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  • 2
    • 0027580784 scopus 로고
    • 1-W CW Tm-doped fluoride fibre laser at 1.47 μm
    • Y. Miyajima et al., "1-W CW Tm-doped Fluoride Fibre Laser at 1.47 μm," Electron. Lett. 29, 660-661 (1993).
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    • H. Horie et al., "Reliability improvement of 980 nm laser diodes with a new facet passivation process," J. Selected Topics in Quantum Electron. 5, 832-838 (1999).
    • (1999) J. Selected Topics in Quantum Electron. , vol.5 , pp. 832-838
    • Horie, H.1
  • 4
    • 0001001409 scopus 로고
    • High-power operation of strained InGaAs/AlGaAs single quantum well lasers
    • A. Moser et al., "High-power operation of strained InGaAs/AlGaAs single quantum well lasers," Appl. Phys. Lett. 59, 2642-2644 (1991).
    • (1991) Appl. Phys. Lett. , vol.59 , pp. 2642-2644
    • Moser, A.1
  • 5
    • 0346955939 scopus 로고
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    • J.W. Matthews et al., "Defects in epitaxial multilayers," J. Crystal Growth 27, 118-125 (1974).
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    • Matthews, J.W.1
  • 6
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    • Reliable operation of strain-compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers
    • T. Fukunaga et al. "Reliable operation of strain-compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers," Appl. Phys. Lett. 69, 248-250 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 248-250
    • Fukunaga, T.1
  • 7
    • 0032613895 scopus 로고    scopus 로고
    • Temperature-insensitive operation of real index guided 1.06 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes
    • H. Asano et al., "Temperature-insensitive operation of real index guided 1.06 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes," Appl. Phys. Lett. 74, 3090-3092 (1999).
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 3090-3092
    • Asano, H.1
  • 8
    • 0032628647 scopus 로고    scopus 로고
    • Almost temperature-in-sensitive characteristics in 1.06 μm InGaAs laser diodes with strain compensating electron-barrier layers
    • T. Hayakawa et al., "Almost temperature-in-sensitive characteristics in 1.06 μm InGaAs laser diodes with strain compensating electron-barrier layers," Proc. SPIE 3626, 106-114 (1999).
    • (1999) Proc. SPIE , vol.3626 , pp. 106-114
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  • 9
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  • 10
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    • High-power and highly reliable 1.05 μm InGaAs strained-quantum-well laser diodes as pump sources for Thulium-doped fiber amplifiers
    • M. Yuda et al., "High-power and highly reliable 1.05 μm InGaAs strained-quantum-well laser diodes as pump sources for Thulium-doped fiber amplifiers," OAA '01, Proc. paper PD2 (2001).
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    • Yuda, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.