Highly reliable and high-power operation of 1.05 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes for pumping Tm-doped fiber amplifiers

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 70, Issue , 2002, Pages 479-481

  Hayakawa, T ^a   Akinaga, F ^a   Kuniyasu, T ^a   Matsumoto, K ^a   Fukunaga, T ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); EPITAXIAL GROWTH; PHOTOLUMINESCENCE; PUMPING (LASER); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THULIUM;

TENSILE BARRIERS;

QUANTUM WELL LASERS;

EID: 0036441823     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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10. M. Yuda et al., "High-power and highly reliable 1.05 μm InGaAs strained-quantum-well laser diodes as pump sources for Thulium-doped fiber amplifiers," OAA '01, Proc. paper PD2 (2001).