180mW DBR lasers with first-order grating in GaAs emitting at 1062nm

Electronics Letters

Volumn 36, Issue 6, 2000, Pages 534-535

  Hofmann, L ^a   Klehr, A ^a   Bugge, F ^a   Wenzel, H ^a   Smirnitski, V ^a   Sebastian, J ^a   Erbert, G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION GRATINGS; HOLOGRAPHY; LITHOGRAPHY; LOW TEMPERATURE OPERATIONS; METALLORGANIC VAPOR PHASE EPITAXY; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

DISTRIBUTED BRAGG REFLECTOR; FIRST ORDER GRATING; HOLOGRAPHIC LITHOGRAPHY;

SEMICONDUCTOR LASERS;

EID: 0033877518     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000465     Document Type: Article

References (5)

1. MAJOR, J.S., and WELCH, D.F.: 'Singlemode InGaAs/GaAs distributed Bragg reflector laser diodes operating at 1083nm', Electron. Lett., 1993, 29, (24), pp. 2121-2122
2. HOFMANN, L., KLEHR, A., KNAUER, A., SMIRNITSKI, V.B., and STOLZ, W.: 'DBR lasers emitting at 1060 nm with first-order grating in (InGa)P waveguide layer', Electron. Lett., 1999, 35, (11), pp. 902-903
3. BUGGE, F., KNAUER, A., ZEIMER, A., SEBASTIAN, U., SMIRNlTSKI, V.B., KLEHR, A., ERBERT, G., and WEYERS, M.: 'MOVPE growth of tunable DBR laser diode emitting at 1060nm', J. Cryst. Growth, 1998, 195, pp. 676-680
4. HOFMANN, L., KLEHR, A., KNAUER, A., SMIRNITSKI, V.B., SEBASTIAN, U., and ERBERT, G.: '120mW tunable DBR lasers emitting at 1060 nm', Electron. Lett., 2000, 36, (1), pp. 38-39
5. HOFMANN, L., ERBERT, G., KNAUER, A., SMIRNITSKI, V.B., SEBASTIAN, U., KLEHR, A., WEYERS, A., and STOLZ, W.: 'MOVPE overgrowth of (InGa)P gratings for GaAs-based DBR lasers'. Proc. IPRM '99, Davos, Switzerland, 16-20 May 1999, pp. 119-122