Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology

Journal of Electronic Materials

Volumn 29, Issue 1, 2000, Pages 129-133

  Bernatz, Georg ^a   Nau, Siegfried ^a   Rettig, Rasmus ^a   Stolz, Wolfgang ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COOLING; CRYSTAL ORIENTATION; ETCHING; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

SELECTIVE ETCHING;

HETEROJUNCTIONS;

EID: 0033906809     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0107-3     Document Type: Article

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