Static and dynamic characterization of large-area high-current-density SiC Schottky diodes

Annual Device Research Conference Digest

Volumn , Issue , 1998, Pages 84-85

  Dolny, G M ^a   Morisette, D T ^a   Shenoy, P M ^a   Zafrani, M ^a   Gladish, J ^a   Woodall, J M ^a   Cooper, J A ^a   Melloch, M R ^a  

^a INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CHARGE CARRIERS; CURRENT DENSITY; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SWITCHING;

INSULATOR GATE BIPOLAR TRANSISTOR; MINORITY CARRIER INJECTION; SWITCHING LOSS;

SCHOTTKY BARRIER DIODES;

EID: 0032317531     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)