Al2O3 layers for microelectronics applications

Journal of Wide Bandgap Materials

Volumn 9, Issue 1-2, 2001, Pages 109-116

  Dusiński, Emil ^a   Szmidt, Jan ^a   Zdunek, Krzysztof ^a   Elert, Marek ^a   Barcz, Adam ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

Aluminium oxide; MIS transistor; Silicon carbide

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELLIPSOMETRY; MICROELECTRONICS; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; THIN FILM TRANSISTORS;

ELECTRICAL PARAMETERS; MIS TRANSISTORS; PLASMA PROCESS; REACTIVE PULSE PLASMA (RPP);

ALUMINA;

EID: 2942576746     PISSN: 1524511X     EISSN: None     Source Type: Journal    
DOI: 10.1106/152451102025838     Document Type: Article

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