A new class of defects in highly n-doped silicon

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 784-789

  Citrin, P H ^a   Voyles, P M ^a,c   Chadi, D J ^b   Muller, D A ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b NEC LABORATORIES AMERICA   (United States)

^c UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

EXAFS; Interstitials; STEM; Vacancies

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DIFFUSION; DOPING (ADDITIVES); FERMI LEVEL; LOW TEMPERATURE OPERATIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON CHANNELING EXPERIMENTS; INTERSTITIALS; VACANCIES;

SEMICONDUCTING SILICON;

EID: 0347316529     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.190     Document Type: Conference Paper

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