Geometric frustration of 2d dopants in silicon: Surpassing electrical saturation

Physical Review Letters

Volumn 83, Issue 16, 1999, Pages 3234-3237

  Citrin, P H ^a   Muller, D A ^a   Gossmann, H J ^a   Vanfleet, R ^b   Northrup, P A ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b School of Civil and Environmental Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001503735     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.3234     Document Type: Article

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