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Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4774-4776

Effect of vacancy and interstitial excess on the deactivation kinetics of As in Si

(3) Solmi, S a Attari, M a Nobili, D a

a CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING BEHAVIOR; BURIED OXIDE LAYERS; DEACTIVATION KINETICS; DEACTIVATION RATE; EXCESS VACANCY; IMPLANTATION DAMAGE; INTERSTITIALS; PROJECTED RANGE; SILICON-ON-INSULATOR SUBSTRATES;

KINETICS; POINT DEFECTS; SILICON;

VACANCIES;

EID: 79956022797 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1489719 Document Type: Article

Times cited : (11)

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