A long-wavelength MEMS tunable VCSEL incorporating a tunnel junction

IEEE Photonics Technology Letters

Volumn 15, Issue 9, 2003, Pages 1183-1185

  Kner, P ^a   Kageyama, T ^b   Boucart, J ^c   Stone, R ^d   Sun, D ^e   Nabiev, R F ^a   Pathak, R ^a   Yuen, W ^a  

^a Bandwidth9 Inc   (United States)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c EPFL   (Switzerland)

^d INFINERA CORPORATION   (United States)

^e LumiLeds   (United States)

Author keywords

Laser tuning; Optical modulation; Quantum well lasers; Surface emitting lasers; Tunnel diodes

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; LASER TUNING; LIGHT MODULATION; MICROELECTROMECHANICAL DEVICES; PERFORMANCE; SEMICONDUCTOR DEVICE STRUCTURES; TUNNEL DIODES; TUNNEL JUNCTIONS;

OPTICAL LOSS; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASER;

QUANTUM WELL LASERS;

EID: 0141674926     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.816661     Document Type: Article

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