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1
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0031673093
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Top emitting micromechanical VCSEL with a 31.6 nm tuning range
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Jan.
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M. Y. Li, W. Yuen, G. S. Li, and C. J. Chang-Hasnain, "Top emitting micromechanical VCSEL with a 31.6 nm tuning range," IEEE Photon. Technol. Lett., vol. 10, pp. 18-20, Jan. 1998.
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(1998)
IEEE Photon. Technol. Lett.
, vol.10
, pp. 18-20
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Li, M.Y.1
Yuen, W.2
Li, G.S.3
Chang-Hasnain, C.J.4
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2
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0034847141
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Tunable semiconductor lasers for WDM telecommunications
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D. A. Ackerman, J. E. Johnson, L. J.-P. Ketelsen, J. M. Geary, W. A. Asous, F. S. Walters, J. M. Freund, S. Hybertsen, K. G. Glogovsky, C. W. Lentz, C. L. Reynolds, R. B. Bylsma, E. J. Dean, and T. L. Koch, "Tunable semiconductor lasers for WDM telecommunications," in Proc. 2001 Indium Phosphide Related Materials, Nara, Japan, pp. 571-574.
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Proc. 2001 Indium Phosphide Related Materials, Nara, Japan
, pp. 571-574
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Ackerman, D.A.1
Johnson, J.E.2
Ketelsen, L.J.-P.3
Geary, J.M.4
Asous, W.A.5
Walters, F.S.6
Freund, J.M.7
Hybertsen, S.8
Glogovsky, K.G.9
Lentz, C.W.10
Reynolds, C.L.11
Bylsma, R.B.12
Dean, E.J.13
Koch, T.L.14
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3
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0031108794
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64 °C continuous-wave operation of 1.5-μm vertical-cavity laser
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Apr.
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N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, J. E. Bowers, and E. L. Hu, "64 °C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 359-365, Apr. 1997.
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(1997)
IEEE J. Select. Topics Quantum Electron.
, vol.3
, pp. 359-365
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Margalit, N.M.1
Piprek, J.2
Zhang, S.3
Babic, D.I.4
Streubel, K.5
Mirin, R.P.6
Wesselmann, J.R.7
Bowers, J.E.8
Hu, E.L.9
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4
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0033123732
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Metamorphic DBR and tunnel junction injection: A CW-RT monolithic long-wavelength VCSEL
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May/June
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J. Boucart, C. Starck, F. Gaborit, A. Plais, N. Bouché, E. Derouin, L. Goldstein, C. Fortin, D. Carpentier, P. Salet, F. Brillouet, and J. Jaacquet, "Metamorphic DBR and tunnel junction injection: A CW-RT monolithic long-wavelength VCSEL," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 520-529, May/June 1999.
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(1999)
IEEE J. Select. Topics Quantum Electron.
, vol.5
, pp. 520-529
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Boucart, J.1
Starck, C.2
Gaborit, F.3
Plais, A.4
Bouché, N.5
Derouin, E.6
Goldstein, L.7
Fortin, C.8
Carpentier, D.9
Salet, P.10
Brillouet, F.11
Jaacquet, J.12
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5
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0033719394
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High-performance 1.6 μm single-epitaxy-top-emitting-VCSEL
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W. Yuen, G. S. Li, R. F. Nabiev, J. Boucart, P. Kner, R. J. Stone, D. Zhang, M. Beaudoin, T. Zheng, C. He, K. Yu, M. Jansen, D. P. Worland, and C. J. Chang-Hasnain, "High-performance 1.6 μm single-epitaxy-top-emitting-VCSEL," Electron. Lett., vol. 36, pp. 1-2, 2000.
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(2000)
Electron. Lett.
, vol.36
, pp. 1-2
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Yuen, W.1
Li, G.S.2
Nabiev, R.F.3
Boucart, J.4
Kner, P.5
Stone, R.J.6
Zhang, D.7
Beaudoin, M.8
Zheng, T.9
He, C.10
Yu, K.11
Jansen, M.12
Worland, D.P.13
Chang-Hasnain, C.J.14
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6
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0000687320
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Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiency
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Apr.
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M. Ortsiefer, R. Shau, G. Bohm, F. Kohler, and M.-C. Amann, "Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiency," Appl. Phys. Lett., vol. 76, no. 16, pp. 2179-2181, Apr. 2000.
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(2000)
Appl. Phys. Lett.
, vol.76
, Issue.16
, pp. 2179-2181
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Ortsiefer, M.1
Shau, R.2
Bohm, G.3
Kohler, F.4
Amann, M.-C.5
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7
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0032637076
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MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice-matched to InP
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July
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J. P. Debray, I. Sagnes, G. Le Roux, P. Legay, M. Quillec, C. Kazmierski, R. Madani, and J. F. Palmier, "MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice-matched to InP," IEEE Photon. Technol. Lett., vol. 11, pp. 770-772, July 1999.
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(1999)
IEEE Photon. Technol. Lett.
, vol.11
, pp. 770-772
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Debray, J.P.1
Sagnes, I.2
Le Roux, G.3
Legay, P.4
Quillec, M.5
Kazmierski, C.6
Madani, R.7
Palmier, J.F.8
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8
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0032685221
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Electrically pumped, single epitaxial VCSEL at 1.55 μm with Sb-based mirror
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E. Hall, G. Almuneau, J. K. Kim, H. Kroemer, and L. A. Coldren, "Electrically pumped, single epitaxial VCSEL at 1.55 μm with Sb-based mirror," Electron. Lett., vol. 35, pp. 1337-1338, 1999.
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(1999)
Electron. Lett.
, vol.35
, pp. 1337-1338
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Hall, E.1
Almuneau, G.2
Kim, J.K.3
Kroemer, H.4
Coldren, L.A.5
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9
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0000201276
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Improved electrical and thermal properties of InP-AlGaAsSb Bragg mirrors for long-wavelength vertical-cavity lasers
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Oct.
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G. Almuneau, E. Hall, T. Mukaihara, S. Nakagawa, C. Luo, D. R. Clarke, and L. A. Coldren, "Improved electrical and thermal properties of InP-AlGaAsSb Bragg mirrors for long-wavelength vertical-cavity lasers," IEEE Photon. Technol. Lett., vol. 12, pp. 1322-1324, Oct. 2000.
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(2000)
IEEE Photon. Technol. Lett.
, vol.12
, pp. 1322-1324
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Almuneau, G.1
Hall, E.2
Mukaihara, T.3
Nakagawa, S.4
Luo, C.5
Clarke, D.R.6
Coldren, L.A.7
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10
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0035848710
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MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55 μm VCSELs
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Apr.
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I. Sagnes, G. Le Roux, C. Mériadec, A. Mereuta, G. Saint-Girons, and M. Bensoussan, "MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55 μm VCSELs," Electron. Lett., vol. 37, pp. 500-501, Apr. 2001.
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(2001)
Electron. Lett.
, vol.37
, pp. 500-501
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Sagnes, I.1
Le Roux, G.2
Mériadec, C.3
Mereuta, A.4
Saint-Girons, G.5
Bensoussan, M.6
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11
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0037179877
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Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 μm VCSELs
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Sept.
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M. H. M. Reddy, T. Asano, R. Koda, D. A. Buell, and L. A. Coldren, "Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 μm VCSELs," Electron. Lett., vol. 38, no. 20, pp. 1181-1182, Sept. 2002.
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(2002)
Electron. Lett.
, vol.38
, Issue.20
, pp. 1181-1182
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Reddy, M.H.M.1
Asano, T.2
Koda, R.3
Buell, D.A.4
Coldren, L.A.5
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12
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0001239816
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Thermal conductivity of lateral epitaxial overgrown GaN films
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C. Y. Luo, H. Marchand, D. R. Clarke, and S. P. DenBaars, "Thermal conductivity of lateral epitaxial overgrown GaN films," Appl. Phys. Lett., vol. 75, pp. 4151-4153, 1999.
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(1999)
Appl. Phys. Lett.
, vol.75
, pp. 4151-4153
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Luo, C.Y.1
Marchand, H.2
Clarke, D.R.3
DenBaars, S.P.4
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13
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0141674926
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A long-wavelength MEMS tunable VCSEL incorporating a tunnel junction
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Sept.
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P. Kner, T. Kageyama, J. Boucart, R. Stone, D. Sun, R. F. Nabiev, and W. Yuen, "A long-wavelength MEMS tunable VCSEL incorporating a tunnel junction," IEEE Photon. Technol. Lett., vol. 15, Sept. 2003.
-
(2003)
IEEE Photon. Technol. Lett.
, vol.15
-
-
Kner, P.1
Kageyama, T.2
Boucart, J.3
Stone, R.4
Sun, D.5
Nabiev, R.F.6
Yuen, W.7
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14
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0141580468
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1550 nm tunable VCSELs with wide tuning range using stable MEMS tuning structures
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submitted for publication
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D. Sun, W. Fan, P. Kner, J. Boucart, and W. Yuen, "1550 nm tunable VCSELs with wide tuning range using stable MEMS tuning structures," IEEE Photon. Technol. Lett., submitted for publication.
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IEEE Photon. Technol. Lett.
-
-
Sun, D.1
Fan, W.2
Kner, P.3
Boucart, J.4
Yuen, W.5
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