AlGaInAs/InP-epitaxy for long wavelength vertical-cavity surface-emitting lasers

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 319-323

  Boehm, G ^a   Ortsiefer, M ^a   Shau, R ^a   Koehler, F ^a   Meyer, R ^a   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

A3. Molecular beam eiptaxy; B1. Arsenides; B3. Laser diodes

Indexed keywords

CONTINUOUS WAVE LASERS; CRYSTAL LATTICES; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL RESOLVING POWER; PYROMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; THRESHOLD VOLTAGE;

BRAGG REFLECTORS; VERTICAL-CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0035399288     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00713-8     Document Type: Conference Paper

References (3)