Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 μm VCSELs

Electronics Letters

Volumn 38, Issue 20, 2002, Pages 1181-1182

  Reddy, M H M ^a   Asano, T ^a   Koda, R ^a   Buell, D A ^a   Coldren, L A ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT REFLECTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL CONDUCTIVITY; X RAY DIFFRACTION ANALYSIS;

DISTRIBUTED BRAGG REFLECTORS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0037179877     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020796     Document Type: Article

References (10)

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