Identification of MOS gate dielectric breakdown spot using high selectivity Cl radical etching technique

Journal of the Electrochemical Society

Volumn 143, Issue 8, 1996, Pages 2691-2694

  Sugino, Rinji ^a   Nakanishi, Toshlro ^a   Takasaki, Kanetake ^a   Ito, Takashi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRODES; ETCHING; FREE RADICALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDES; SCANNING ELECTRON MICROSCOPY; SILICA; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

CHLORINE RADICALS; CRYSTALLIZED SILICON; CURRENT LEAKAGE PATH; DIELECTRIC BREAKDOWN SPOTS; GATE OXIDES; HIGH SELECTIVITY CHLORINE RADICAL ETCHING;

DIELECTRIC PROPERTIES;

EID: 0030214819     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837073     Document Type: Article

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