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Volumn 2, Issue 5, 2002, Pages 359-364

Emission and capture processes in radiation-damaged silicon semiconductor diodes

Author keywords

Deep level; Diode; Radiation; Semiconductor; Silicon

Indexed keywords


EID: 0036800679     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1567-1739(02)00140-2     Document Type: Article
Times cited : (8)

References (20)
  • 14
    • 0004052502 scopus 로고
    • The Electrical Characterization of Semiconductors: Majority Carriers and Electron States
    • N.H. Marsh (Ed.), Academic, London
    • P. Blood, J.W. Orton, in: N.H. Marsh (Ed.), The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Academic, London, 1992.
    • (1992)
    • Blood, P.1    Orton, J.W.2
  • 18
    • 4243707501 scopus 로고    scopus 로고
    • Irradiated silicon detectors as relaxation devices
    • Ph.D. Thesis, Lancaster University, Lancaster, UK
    • M. McPherson, Irradiated silicon detectors as relaxation devices, Ph.D. Thesis, Lancaster University, Lancaster, UK, 1998.
    • (1998)
    • McPherson, M.1
  • 20
    • 4243377505 scopus 로고    scopus 로고
    • Radiation effects in silicon diodes
    • 46th Annual Conference of the South African Institute of Physics, Durban, South Africa, 3-6 July
    • M. McPherson, Radiation effects in silicon diodes, in: 46th Annual Conference of the South African Institute of Physics, Durban, South Africa, 3-6 July 2001.
    • (2001)
    • McPherson, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.