Photoluminescence excitonic linewidth in GaAsN alloys

Journal of Applied Physics

Volumn 94, Issue 12, 2003, Pages 7505-7508

  Senger, R T ^a,b   Bajaj, K K ^a  

^a EMORY UNIVERSITY   (United States)

^b SCIENTIFIC AND TECHNOLOGICAL RESEARCH COUNCIL OF TURKEY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MASS; EXCITONIC LINEWIDTH; FREE EXCITONS;

COMPOSITION; CONCENTRATION (PROCESS); ELECTRONIC PROPERTIES; ENERGY GAP; GROWTH (MATERIALS); LATTICE CONSTANTS; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITROGEN; OPTOELECTRONIC DEVICES; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 0346305187     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1628405     Document Type: Article

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