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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1078-1081

Effective mass and conduction band dispersion of GaAsN/GaAs quantum wells

(6) Skierbiszewski, C a Lepkowski S P d Perlin, P a Suski, T a Jantsch, W b Geisz, J c

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

b JOHANNES KEPLER UNIVERSITY LINZ (Austria)

c NATIONAL RENEWABLE ENERGY LABORATORY (United States)

d CARDINAL STEFAN WYSZY SKI UNIVERSITY (Poland)

Author keywords

Band anti crossing model; Effective mass; GaAsN; Quantum wells

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; MATHEMATICAL MODELS; NITROGEN; SEMICONDUCTOR QUANTUM WELLS;

OPTICAL TRANSITION ENERGIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036492747 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/S1386-9477(02)00307-7 Document Type: Article

Times cited : (23)

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