High-resolution transmission electron microscopy of silicide formation and morphology development of Ni/Si and Ni/Si1-xGex

Journal of Electronic Materials

Volumn 32, Issue 11, 2003, Pages 1171-1181

  Chen, X ^a   Shi, Z ^a   Banerjee, S K ^a   Zhou, J P ^a   Rabenberg, L K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

High resolution TEM; Nickel; NiSi1 xGex; Phase formation; Si1 xGex; Silicide

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY MEASUREMENT; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH TEMPERATURE APPLICATIONS; MORPHOLOGY; PHASE INTERFACES; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NICKEL SILICIDE PHASE FORMATION; SILICIDE FORMATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0346216014     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0008-3     Document Type: Article

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