Nickel silicidation techniques for strained Si1-xGex, Si1-x-yGexCy, and Si1-yCy alloys material-device applications

Journal of Electronic Materials

Volumn 32, Issue 3, 2003, Pages 184-190

  Shi, Zhongha ^a   Onsongo, David ^a   Chen, Xiao ^a   Kim, Dong Won ^a   Nieh, Renee E ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Alloys; MOSFET; Nickel; Resistivity; Si1 x yGe xCy; Si1 xGex; Si1 yCy; Silicide

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; INTERFACES (MATERIALS); MOSFET DEVICES; NICKEL; STRAIN; THERMAL EFFECTS;

CRYSTALLINE QUALITY; NICKEL SILICIDE; SHEET RESISTANCE; SILICIDATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037350832     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0191-2     Document Type: Article

References (15)

1. T. Morimoto et al. IEEE Trans. Electron Dev. 42, 915 (1995).
2. T. Manku, J.M. McGregor, A. Nathan, D.J. Roulston, J.P. Noel, and D.C. Houghton, IEEE Trans. Electron Dev. 40, 1990 (1993).
3. Y. Yeo, Q. Lu, T. King, C. Hu, T. Kawashima, M. Oishi, S. Mashiro, and J. Sakai, IEEE IEDM (San Francisco, CA: IEEE, 2000), pp. 753-756.
4. J.S. Rieh, K. Watson, F. Guarin, Z. Yang, P.C. Wang, A. Joseph, G. Freeman, and S. Subbanna, Reliability Physics Symp. Proc., 40th Annual (Dallas, TX: IEEE, 2002), pp. 184-188.
5. W.C. Lee, B. Watson, T.J. King, and C. Hu, IEEE Electron Device Lett. 20, 232 (1999).
6. H.J. Huang, K.M. Chen, T.Y. Huang, T.S. Chao, G.W. Huang, C.H. Chien, and C.Y. Chang, IEEE Trans. Electron Dev. 48, 1627 (2001).
7. S. Banerjee, SPIE 3212, 118 (1997).
8. D. Onsongo, Z. Shi, and S. Banerjee, submitted to IEEE Electron Device Lett.
9. H.J. Osten and P. Gaworzewski, J. Appl. Phys. 82, 4977 (1997).
10. D.C. Houghton, J. Appl. Phys. 70, 2136 (1991).
11. K.I. Goto, J. Watanabe, T. Sukegawa, A. Fushida T. Sakuma, and T. Sugii, IEEE 36th Annual Int. Reliability Physics Symp. (Reno, NV: IEEE, 1998), pp. 363-369.
12. T.H. Hou, T.F. Lei, and T.S. Chao, IEEE Electron Device Lett. 20, (1999), pp. 572-573.
13. H. Yang, R.F. Pinizzotto, L. Luo, and F. Namavar, Appl. Phys. Lett. 62, 2694 (1993).
14. Z. Shi, D. Onsongo, K. Onishi, J.C. Lee, and S.K. Banerjee, accepted for publication in IEEE Electron Device Lett.
15. Z. Shi, X. Chen, D. Onsongo, E.J. Quinones, and S.K. Banerjee, Solid State Electronics 44, 1223 (2000).