Structure and thermal stability of Ni/Si1-xGex contacts for VLSI applications

Electronics Letters

Volumn 36, Issue 21, 2000, Pages 1819-1821

  Qin, Ming ^a   Poon, V M C ^b   Yuen, C Y ^b  

^a SOUTHEAST UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC RESISTANCE; NICKEL; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRUCTURE (COMPOSITION); THERMODYNAMIC STABILITY; VLSI CIRCUITS; X RAY PHOTOELECTRON SPECTROSCOPY;

FOUR-POINT PROBE METHOD;

SEMICONDUCTING FILMS;

EID: 0034297360     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001256     Document Type: Article

References (9)

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