High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 114-115

  Ku, Ja Hum ^a   Choi, C J ^a   Song, S ^a   Choi, S ^a   Fujihara, K ^a   Kang, H K ^a   Lee, S I ^a   Choi, H G ^a   Ko, D H ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; GATES (TRANSISTOR); NICKEL COMPOUNDS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS;

SHEET RESISTANCE;

MOSFET DEVICES;

EID: 0033698754     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)