Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy

Materials Science in Semiconductor Processing

Volumn 3, Issue 3, 2000, Pages 163-171

  Hanser, A D ^a   Banks, A D ^a   Davis, R F ^a   Jahnen, B ^b   Albrecht, M ^b   Dorsch, W ^b   Christiansen, S ^b   Strunk, H P ^b  

^a North Carolina State University   (United States)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CRYSTAL MICROSTRUCTURE; DESORPTION; DISLOCATIONS (CRYSTALS); SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; VAPOR PHASE EPITAXY;

BURGERS VECTOR;

SEMICONDUCTING FILMS;

EID: 0034204030     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(99)00023-2     Document Type: Article

References (23)

1. Nakamura S., Senoh M., Iwasa N., Nagahama S. Jpn J Appl Phys. 34:1995;L797.
2. Nakamura S. J Crystal Growth. 170:1997;11.
3. Jones R.D., Rose K. J Phys Chem Solids. 48:1987;587.
4. Guo Q., Kato O. J Appl Phys. 73:1993;7969.
5. Ho I., Stringfellow G.B. Appl Phys Lett. 69:1996;2701.
6. Wu X.H., Elsass C.R., Abare A., Mack M., Keller S., Petroff P.M., DenBaars S.P., Speck J.S., Rosner S.J. Appl Phys Lett. 72:1998;692.
7. Chen Y., Takeuchi T., Amano H., Akasaki I., Yamada N., Kaneko Y., Wang S.Y. Appl Phys Lett. 72:1998;710.
8. Jahnen B., Albrecht M., Dorsch W., Christiansen S., Strunk H.P., Hanser D., Davis R.F. Mater Res Soc Internet J Nitride Semicond Res. 3:1998;39.
9. Nakamura S., Mukai T. Jpn J Appl Phys. 31:1992;L1457.
10. Shimizu M., Hiramatsu K., Sawaki N. J Crystal Growth. 145:1994;209.
11. Keller S., Keller B.P., Kapolnek D., Mishra U.K., DenBaars S.P., Shmagin I.K., Kolbas R.M., Krishnakutty S. J Crystal Growth. 170:1997;349.
12. Yoshimoto N., Matsuoka T., Sasaki T., Katsui A. Appl Phys Lett. 59:1991;2251.
13. Yuzhen T., Guoyi Z., Zhijian J., Xiaozhong D., Shumin W. Solid State Comm. 102:1997;405.
14. Hanser A.D., Wolden C.A., Perry W.G., Zheleva T., Carlson E.P., Banks A.D., Therrien R.J., Davis R.F. J Electron Mater. 27:1998;238.
15. Van der Stricht W., Moerman I., Demeester P., Considine L., Thrush E.J., Crawley J.A. Mater Res Soc Internet J Nitride Semicond Res. 2:1997;16.
16. Tansley T.L. Edgar J.H. Properties of group III nitrides. 1994;35 INSPEC, London.
17. Van der Stricht W., Jacobs K., Moerman I., Demeester P., Considine J., Thrush E.J., Crawley J.A., Ruterana P. Nitride semiconductors. Ponce F.A., DenBaars S.P., Meyer B.K., Nakamura S., Strite S. Material Research Society Symposium Proceedings, Pittsburgh, PA. vol. 482:1998;107.
18. Chichibu S., Wada K., Nakamura S. Appl Phys Lett. 71:1997;2346.
19. Hiramatsu K., Kawaguichi Y., Shimizu M., Sawaki N., Zheleva T., Davis R.F., Tsuda H., Taki W., Kuwano N., Oki K. Mater Res Soc Internet J Nitride Semicond Res. 2:1997;6.
20. Sun C.J., Zubair Anwar M., Chen Z., Yang J.W., Asif Khan M., Shur M.S., Bykhovski A.D., Liliental-Weber Z., Kisielowski C., Smith M., Lin J.Y., Xiang H.X. Appl Phys Lett. 70:1997;2978.
21. Liliental-Weber Z., Chen Y., Ruvimov S., Washburn J. Phys Rev Lett. 79:1997;2835.
22. Nam O.H., Zheleva T.S., Bremser M.D., Thomson D.B., Davis R.F. Nitride semiconductors. Ponce F.A., DenBaars S.P., Meyer B.K., Nakamura S., Strite S. Material Research Society Symposium Proceedings, Pittsburgh. vol. 468:1998;301.
23. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., Chocho K. Appl Phys Lett. 72:1998;211.