Influence of mobility model on extraction of stress dependent source-drain series resistance

Microelectronics Reliability

Volumn 44, Issue 1, 2004, Pages 25-32

  De Souza, M M ^a   Manhas, S K ^a   Chandra Sekhar, D ^a   Oates, A S ^b   Chaparala, P ^c  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; ELECTRON MOBILITY; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTOR DEVICE MODELS; STRESS ANALYSIS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

SERIES RESISTANCE MEASUREMENT; TRANSISTOR BIASING; TRANSISTOR DRAINS; TRANSISTOR SOURCES;

MOSFET DEVICES;

EID: 0346151244     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2003.09.005     Document Type: Article

References (24)

1. Ang D.S., Ling C.H. A unified model for the self-limiting hot carrier degradation in LDD n-MOSFETs. IEEE Trans. Electron Dev. 45:1998;149.
2. Raychoudhuri A., Deen M.J., Kwan W.S., King M.I.H. Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFETs. TED. 43:1996;1114.
3. Pan Y., Ng K.K., Wei C.C. Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFETs. IEEE Electron Dev. Lett. 15:1994;499.
4. Chan V.H., Chung J.E. Two-stage hot carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction. IEEE Trans. Electron Dev. 42:1995;957.
5. Walter G.H., Weber W., Brederlow R., Jurk R., Linnenbank C.G., Schlunder C., et al. Precise quantitative evaluation of hot-carrier induced drain series resistance degradation in LATID-n-MOSFETs. Microelectron. Reliab. 38:1998;1063.
6. Lou C.-L., Chim W.-K., Chan D.S.-H., Pan Y. A novel single-device DC method for extraction of effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFETs. IEEE Trans. Electron Dev. 45:1998;1317.
7. De Souza M.M., Wang J., Manhas S., Sankara Narayanan E.M., Oates A.S. A comparison of early stage hot carrier degradation behaviour in 5 V and 3 V submicron low doped drain metal oxide semiconductor field effect transistors. Microelectron. Reliab. 44(2):2001;169.
8. Sabnis A.G., Clemens J.T. Characterisation of the electron mobility in the inverted 〈1. 0 0〉 Si surface IEDM Tech. Dig. 18:1979.
9. Terada K., Muta H. A new method to determine effective MOSFET channel length. Japanese Journal of Appl. Physics. 18:1979;953.
10. Chern J.G.J., Chang P., Motta R.F., Godinho N. A new method to determine MOSFET channel length. IEEE Electron Dev. Lett. 1:1980;170.
11. Hu G.J., Chang C., Chia Y.T. Gate voltage dependent effective channel length and series resistance of LDD MOSFETs. IEEE Trans. Electron Dev. 34:1987;2469.
12. Taur Y, Zicherman DS, Lombardi DR, Restle PJ, Hsu CH, Hanafi Hi, et al. "A New Shift and Ratio" method for MOSFET channel length extraction. 1986;EDL-1:170.
13. Succiu P.L., Johnston R.L. Experimental derivation of the source and drain resistance of MOS transistors. IEEE Trans. Electron Dev. 27:1980;1846.
14. De La Moneda F.H., Kotech H.N., Shatzkes M. Measurement of MOSFET constants. IEEE Electron Dev. Lett. 3:1982;10.
15. Chen K., Wann H.C., Duster J., Pramanik D., Nariani S., Ko P.K., et al. An accurate semi-empirical saturation drain current model for LDD n-MOSFET. IEEE Electron Dev. Lett. 17:1996;145.
16. Taur Y., Ning T. Fundamentals of modern VLSI devices. 1998;Cambridge Univ. Press. p. 137.
17. Sun S.C., Plummer J.D. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces. IEEE Trans. Electron Dev. 27:1980;1497.
18. Takeda E., Shimizu A., Hagiwara T. Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFETs. IEEE Electron Dev. Lett. 4:1983;329.
19. Ancona M.G., Saks N.S., McCarthy D. Lateral distribution of hot-carrier-induced interface taps in MOSFETs. IEEE Trans. Electron Dev. 35:1988;2221.
20. Mahapatra S., Parikh C.D., Rao V.R., Viswanathan C.R., Vasi J. A comprehensive study of hot-carrier induced interface and oxide trap distribution in MOSFETs using a novel charge pumping technique. IEEE Trans. Electron Dev. 47:2000;171.
21. Hsu F.-C., Tam S. Relationship between MOSFET degradation and hot-electron-induced interface-sate generation. IEEE Electron Dev. Lett. 5:1984;50.
22. Jean Y.-S., Wu C.-Y. The threshold-voltage model of MOSFET devices with localized interface charge. IEEE Trans. Electron Dev. 44:1997;441.
23. MEDICI, 2D device simulator, Avanti, 2000.
24. Manhas SK, Oates AS, De Souza MM. A new extraction methodology for series resistance and mobility degradation of hot carrier stressed NMOSFETs. IEEE TDMR, submitted for publication.