Precise quantitative evaluation of the hot-carrier induced drain series resistance degradation in LATID-n-MOSFETs

Microelectronics Reliability

Volumn 38, Issue 6-8, 1998, Pages 1063-1068

  Walter, Georg H ^a,b   Weber, Werner ^a   Brederlow, Ralf ^a,b   Jurk, Reinhard ^a   Linnenbank, Carsten G ^a   Schlünder, Christian ^a   Schmitt Landsiedel, Doris ^b   Thewes, Roland ^a  

^a SIEMENS AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; HOT CARRIERS; INTEGRATED CIRCUIT TESTING;

DRAIN SERIES RESISTANCE DEGRADATION;

MOSFET DEVICES;

EID: 0032084109     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00112-7     Document Type: Article

References (9)

1. D. S. Ang et al., "A unified model for the self-limiting hotcarrier degradation in LDD n-MOSFET's", IEEE Trans. Electron Devices, 1998, p. 149
2. Y. Pan et al., "Hot-carrier induced electron mobility and series resistance degradation in LDD n-MOSFETs", IEEE Electron Device Letters 1994, p. 499
3. R. Thewes et al., "Mechanisms of hot-carrier degradation of analog device parameters in n-MOSFETs", Proc. ESSDERC 1993, p. 85
4. B. J. Sheu et al., "Source and drain resistance of LDD MOSFET's", IEEE Electron Device Letters 1984, p. 365
5. G. J. Hu et al., "Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET's", IEEE Trans. Electron Devices 1987, p. 2469
6. G. Groeseneken et al., "A reliable approach to charge-pumping measurements in MOS transistors", IEEE Trans. Electron Devices 1984, p. 42
7. M. Tsuchiaki et al., "A new charge-pumping method for determining the spatial distribution of hot-carrier induced fixed charge in p-MOSFET's", IEEE Trans. Electron Devices 1993, p. 1768
8. C. Chen et al., "Direct lateral profiling of both interface traps and oxide charge in thin gate MOSFET devices", IEEE Trans. Electron Devices 1998, p. 512
9. P. Heremans et al., "Analysis of the charge-pumping technique and its application for evaluation of MOSFET degradation", IEEE Trans. Electron Devices 1989, p. 1318