Fast programming/erasing of thin-oxide EEPROMs

IEEE Transactions on Electron Devices

Volumn 48, Issue 4, 2001, Pages 817-819

  Versari, R ^a   Pieracci, A ^a   Ricco B ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

High voltage tunneling; Programming erasing speed; Read disturb lifetime; Thin oxide EEPROMs

Indexed keywords

COMPUTER PROGRAMMING; DATA STORAGE EQUIPMENT; DATA TRANSFER; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON TUNNELING; NONVOLATILE STORAGE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

HIGH-VOLTAGE TUNNELING; READ-DISTURB LIFETIME;

PROM;

EID: 0035307251     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.915734     Document Type: Article

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