Microscopic aspects of defect generation in SiO2

Microelectronics Reliability

Volumn 42, Issue 9-11, 2002, Pages 1427-1432

  Feruglio, Ruggero ^a   Irrera, Fernanda ^a   Riccò, Bruno ^b  

^a Dip Ingegneria Elettronica   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY TRANSFER;

DEFECT GENERATION; ELECTRICAL STRESS; SI DANGLING BONDS; SI-H BONDS; STABLE TRAPS; STRESS CONDITION;

DEFECTS;

EID: 84988423845     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00163-4     Document Type: Article

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