Tunneling bursts for negligible SILC degradation

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1497-1500

  Riccò, Bruno ^a   Pieracci, A ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

STRESS-INDUCED LEAKAGE CURRENT (SILC);

ELECTRON TUNNELING; LEAKAGE CURRENTS; NONVOLATILE STORAGE; SEMICONDUCTOR DEVICE MANUFACTURE;

MOS CAPACITORS;

EID: 0032678403     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772499     Document Type: Article

References (7)

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