Fast tunneling programming of nonvolatile memories

IEEE Transactions on Electron Devices

Volumn 47, Issue 6, 2000, Pages 1297-1299

  Versari, Roberta ^a   Pieracci, Augusta ^a   Morigi, Damiana ^a   Riccö, Bruno ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS DEVICES; NONVOLATILE STORAGE;

DEVICE UNDER TEST; FAST TUNNELING PROGRAMMING; FLASH MEMORIES; FOWLER-NORDHEIM TUNNELING; HIGH VOLTAGE TUNNELING PULSES; STRESS INDUCED LEAKAGE CURRENT;

ELECTRON TUNNELING;

EID: 0033732172     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.842977     Document Type: Article

References (12)

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