X-ray diffraction study of interfaces between the layers of the AlAs-Ga1 - XAlxAs superlattice

Crystallography Reports

Volumn 43, Issue 1, 1998, Pages 129-133

  Afanas'ev, A M ^a   Zaitsev, A A ^b   Imamov, R M ^c   Pashaev, E M ^c   Chuev, M A ^a   Mokerov, V G ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b Moscow Inst Radioelectronics A   (Russian Federation)

^c SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

^d INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032343484     PISSN: 10637745     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. Herman, M., Semiconductor Superlattices, Berlin: Academie, 1986. Translated under the title Poluprovodnikovye sverkhreshetki, Moscow: Mir, 1989.
2. Mooney, P.M., J. Appl. Phys., 1990, vol. 67, no. 3, p. R1.
3. Afanas'ev, A.M., Imamov, R.M., Mokerov, V.G., et al., Tr. FIAN, 1993, vol. 5, p. 3.
4. Afanas'ev, A.M., Chuev, M.A., Imamov, R.M., et al., Kristallografiya, 1997, vol. 42, no. 2, p. 1.
5. Tapfer, L., Ospelt, M., and von Kanel, H., J. Appl. Phys., 1990, vol. 67, no. 3, p. 1298.