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Volumn 336, Issue 1-2, 1998, Pages 271-276

X-ray diffraction analysis of strain relaxation in free standing and buried GaAs/GaInAs/GaAs SQW lateral structures

Author keywords

GaAs Ga0.86In0.14As GaAs; Grazing incidence diffraction; High resolution X ray diffraction; Single quantum well

Indexed keywords

CRYSTAL ORIENTATION; MORPHOLOGY; RELAXATION PROCESSES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM ARSENIDE; X RAY CRYSTALLOGRAPHY;

GRAZING INCIDENCE DIFFRACTION (GID) TECHNIQUE; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032307862 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01310-8 Document Type: Article

Times cited : (3)

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