Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

Journal of Crystal Growth

Volumn 200, Issue 3, 1999, Pages 375-381

  Zhuang, Q D ^a   Li, J M ^a   Zeng, Y P ^a   Pan, L ^a   Li, H X ^a   Kong, M Y ^a   Lin, L Y ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; HIGH TEMPERATURE APPLICATIONS; INDIUM; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

DOUBLE CRYSTAL X RAY DIFFRACTION; INFRARED PHOTODETECTOR; STRAIN DISTRIBUTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032642198     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00059-7     Document Type: Article

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