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Volumn 233, Issue 1-2, 2001, Pages 34-39
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Characterization of (In,Ga,Al)As/GaAs quantum-dot superlattice structures by high-resolution X-ray diffraction
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Author keywords
A1. Nanostructures; A1. Transmission electron microsocpy; A1.X ray diffraction; A3 Superlattices; A3. Quantum dots; A3.Molecular beam epitaxy; B2. Semiconductiong III V materials
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Indexed keywords
COMPUTER SIMULATION;
CRYSTAL MICROSTRUCTURE;
HIGH RESOLUTION ELECTRON MICROSCOPY;
MOLECULAR BEAM EPITAXY;
NANOSTRUCTURED MATERIALS;
PHASE COMPOSITION;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM DOTS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
SEMICONDUCTOR NANOSTRUCTURES;
SEMICONDUCTOR SUPERLATTICES;
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EID: 0035501971
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)01543-3 Document Type: Article |
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Times cited : (6)
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References (16)
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