Electron-stimulated fragmentation mechanism for fullerene films on Si(111)-(7×7) surfaces: Dependence on thickness and electron flux

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 3, 2003, Pages 334041-334044

  Bolotov, Leonid ^a   Kanayama, Toshihiko ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FULLERENE; SILICON;

ARTICLE; ELECTRON TRANSPORT; ENERGY TRANSFER; FIELD EMISSION; FILM; IRRADIATION; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; THICKNESS;

EID: 0345169992     PISSN: 10980121     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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