Low-energy electron irradiation of fullerene films formed on Si(111)-(7×7) surfaces

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1684-1686

  Bolotov, Leonid ^a   Kanayama, Toshihiko ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC EXCITATION; EXTRACTION VOLTAGE; FILM MORPHOLOGY; FULLERENE FILMS; LONG LASTING; LOW ENERGY ELECTRON IRRADIATION; PROBE TIPS; SCANNING TUNNELING MICROSCOPES; SI (1 1 1);

COALESCENCE;

ELECTRON IRRADIATION;

EID: 79956055643     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503155     Document Type: Article

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