Interaction of C60 with Si(111) 7 × 7 and Si(100) 2 × 1 surfaces studied by STM, PES and HREELS: annealing effect

Surface Science

Volumn 438, Issue 1-3, 1999, Pages 242-247

  Suto, S ^a   Sakamoto, K ^a   Kondo, D ^a   Wakita, T ^a   Kimura, A ^b   Kakizaki, A ^c   Hu, C W ^d   Kasuya, A ^d  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; BINDING ENERGY; CARBON; CHARGE TRANSFER; ELECTRON ENERGY LOSS SPECTROSCOPY; MOLECULAR DYNAMICS; MOLECULAR VIBRATIONS; PHOTOELECTRON SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; MOLECULAR ORBITALS; VALENCE BAND; VIBRATIONAL EXCITATION SPECTRA;

CHEMISORPTION;

EID: 0033308308     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00576-2     Document Type: Article

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