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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 8 B, 2002, Pages

Rapid joule heating of metal films used to fabricate polycrystalline silicon thin film transistors

(3) Kaneko, Yoshiyasu a Andoh, Nobuyuki a Sameshima, Toshiyuki a

a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)

Author keywords

Crystallization; Defect; Joule heating; Mobility; Poly Si; TFT

Indexed keywords

CARRIER MOBILITY; CHROMIUM; CRYSTALLIZATION; DEFECTS; ELECTRIC CURRENTS; GRAIN SIZE AND SHAPE; HEAT TREATMENT; LOW TEMPERATURE EFFECTS; METALLIC FILMS; POLYCRYSTALLINE MATERIALS; POLYSILICON; THERMAL DIFFUSION; THRESHOLD VOLTAGE;

JOULE HEATING;

THIN FILM TRANSISTORS;

EID: 0037104560 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.l913 Document Type: Article

Times cited : (10)

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