Rigorous electromagnetic modeling of near-field phase-shifting contact lithography

Microelectronic Engineering

Volumn 71, Issue 1, 2004, Pages 34-53

  Wang, Fei ^a   Horn, Mark W ^a   Lakhtakia, Akhlesh ^a  

^a The Pennsylvania State University   (United States)

Author keywords

Contact lithography; Evanescence; Floquet harmonics; Near field; Phase shift lithography; Rigorous coupled wave analysis; Specific absorption rate

Indexed keywords

BOUNDARY VALUE PROBLEMS; ELECTROMAGNETIC WAVE ABSORPTION; HARMONIC ANALYSIS; MASKS; MATHEMATICAL MODELS; MATRIX ALGEBRA; MONOCHROMATORS; PHASE SHIFT; SILICON WAFERS;

CONTACT LITHOGRAPHY; RIGOROUS COUPLED WAVE ANALYSIS (RCWA); SPECIFIC ABSORPTION RATE (SAR);

PHOTORESISTS;

EID: 0344308584     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.09.003     Document Type: Article

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