Contrast mechanisms in high-resolution contact lithography: A comparative study

Microelectronic Engineering

Volumn 57-58, Issue , 2001, Pages 109-116

  Paulus, Michael ^a   Schmid, Heinz ^b   Michel, Bruno ^b   Martin, Olivier J F ^a  

^a ETH ZURICH   (Switzerland)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

Contact lithography; Contrast mechanism; Electric field distribution; Green's tensor technique; Scattering calculation

Indexed keywords

ABSORPTION; ELECTRIC FIELD EFFECTS; LIGHT SCATTERING; MASKS; REFLECTION;

OPTICAL CONTACT LITHOGRAPHY;

PHOTOLITHOGRAPHY;

EID: 0035450317     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00535-4     Document Type: Article

References (11)

1. Method for fabricating high frequency surface wave transducers
2. Sub-diffraction-limited patterning using evanescent near-field optical lithography
3. Submicroscopic pattern replication with visible light
4. Patterning 100 nm features using deep-ultraviolet contact photolithography
5. Light-coupling masks for lensless, sub-wavelength optical lithography
6. Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field
7. Contrast in the evanescent near field of λ/20 period gratings for photolithography
8. Energy flow in light-coupling masks for lensless optical lithography
9. Light propagation and scattering in stratified media: A. Green's tensor approach