Growth of GaN on indium tin oxide/glass substrates by RF plasma-enhanced chemical vapor deposition method

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 3 A, 1998, Pages

  Park, Doo Cheol ^a   Ko, Hyun Chul ^a   Fujita, Shizuo ^a   Fujita, Shigeo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; GLASS; MORPHOLOGY; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; INDIUM TIN OXIDE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SEMICONDUCTING FILMS;

EID: 0032026066     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l294     Document Type: Article

References (9)