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MRS Internet Journal of Nitride Semiconductor Research

Volumn 1, Issue , 1996, Pages

Growth of Ga-face and N-face GaN films using ZnO substrates

(4) Hellman, E S a Buchanan, D N E a Wiesmann, D a Brener, I a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; ETCHING; FILM GROWTH; MOLECULAR BEAM EPITAXY; OXIDATION; PHOTOEMISSION; PIEZOELECTRICITY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY; ZINC OXIDE;

DROPLET FORMATION; LATTICE MATCHES; PIEZOELECTRIC COEFFICIENTS; PLASMA MOLECULAR BEAM EPITAXY;

GALLIUM NITRIDE;

EID: 0010353163 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s1092578300001885 Document Type: Article

Times cited : (13)

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