Characteristic of InGaN/GaN laser diode grown by a multi-wafer MOCVD system

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue , 1999, Pages

  Park, Y ^a   Kim, B J ^a   Lee, J W ^a   Nam, O H ^a   Sone, C ^a   Park, H ^a   Oh, Eunsoon ^a   Shin, H ^a   Chae, S ^a   Cho, J ^a   Kim, Ig Hyeon ^a   Khim, J S ^a   Cho, S ^a   Kim, T I ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOCHROMATORS; REFRACTIVE INDEX; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; WSI CIRCUITS;

MULTI-WAFER MOCVD SYSTEM; NITRIDE SEMICONDUCTORS; SAPPHIRE SUBSTRATES;

SEMICONDUCTOR LASERS;

EID: 0342278777     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000570     Document Type: Article

References (13)

1. S Nakamura, M Senoh, S Nagahama, N Iwasa, T Yamada, T Matsushita, H Kiyoku, Y Sugimoto, Jpn. J. Appl. Phys. 35, L74-L76 (1996).
2. nd ISLLED, 371 (September 29 - October 2, 1998, Chiba, Japan)
3. G.E. Bulman, K. Doverspike, S.T. Sheppard, T.W. Weeks, H.S. Kong, H.M. Dieringer, J.A. Edmond, J.D. Brown, J.T. Swindell, J.F. Schetzina, Electron. Lett. 33, 1556-1557 (1997).
4. T. Kobayashi, F. Nakamura, K. Nagahama, T. Tojyo, H. Nakajima, T. Asatsuma, H. Kawai, M. Ikeda, Electron. Lett. 34, 1494 (1998).
5. A. Kuramata, S. I. Kubota, R. Soejima, K. Domen, K. Horino, T. Tanahashi, Jpn. J. Appl. Phys. 37, L1373 (1998).
6. I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike, H. Amano, Electron. Lett. 32, 1105-1106 (1996).
7. K. Itaya, M. Onomura, J. Nishio, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamato, H. Fujimoto, Y. Kokobun, Y. Ohba, G. Hatakoshi, M. Ishikawa, Jpn. J. Appl. Phys. 35, 11315-11317 (1996).
8. M.P. Mack, A. Abare, M. Aizcorbe, Peter Kozodoy, S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars, MRS Internet J. Nitride Semicond. Res. 2, 41 (1997).
9. Y. Kimura, M. Miyachi, K. Takahashi, T. Tanaka, M. Nishitsuka, A. Watanabe, H. Ota, K Chikuma, Jpn. J. Appl. Phys. 37, L1231 (1998).
10. S Nakamura, M Senoh, S Nagahama, N Iwasa, T Yamada, T Matsushita, Y Sugimoto, H Kiyoku, Appl. Phys. Lett. 70, 1417-1419 (1997).
11. Shuji Nakamura, Gerhard Fasol, The Blue Laser Diode - GaN based Light Emitters and Lasers , (Springer-Verlag, Heidelberg, 1997).
12. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku, Appl. Phys. Lett. 69, 3034-3036 (1996).
13. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho, Jpn. J. Appl. Phys. 37, L627 (1998).