Precise scanning tunneling microscopy images of Si(100) surface dimers at 4.2 K

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 2 A, 2003, Pages

  Sagisaka, Keisuke ^a   Kitahara, Masayo ^a   Fujita, Daisuke ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Asymmetric dimer; Low temperature; Scanning tunneling microscopy; Si(100); Surface reconstruction

Indexed keywords

DIMERS; ELECTRON TUNNELING; LOW TEMPERATURE EFFECTS; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE;

ASYMMETRIC DIMERS; ATOMIC GEOMETRY; TUNNELING CURRENT SETTINGS;

SEMICONDUCTING SILICON;

EID: 0037322263     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.L126     Document Type: Letter

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