Phase transition between c(4 x 2) and p(2 x 2) structures of the Si(100) surface at 6K caused by the fluctuation of phase defects on dimer rows due to dimer flip-flop motion

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 8 SUPPL. B, 1996, Pages

  Shigekawa, Hidemi ^a   Miyake, Koji ^a   Ishida, Masahiko ^a   Hata, Kenji ^a   Oigawa, Haruhiro ^a   Nannichi, Yasuo ^a   Yoshizaki, Ryozo ^a   Kawazu, Akira ^a,c   Abe, Takeru ^a,d   Ozawa, Takehiro ^b   Nagamura, Toshihiko ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Japan Science and Technology Agency   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d RYUKOKU UNIVERSITY   (Japan)

Author keywords

Dimer, c(4 x 2); P(2 x 2); Si(100); STM; Surface reconstruction

Indexed keywords

EID: 0000066929     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1081     Document Type: Article

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